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this is information on a product in full production. may 2012 doc id 16557 rev 4 1/17 17 STL35N6F3 n-channel 60 v, 0.019 , 10 a stripfet? iii power mosfet in powerflat? 5x6 package datasheet ? production data features n-channel enhancement mode 100% avalanched rated low gate charge very low on-resistance applications switching applications description this device is an n-channel enhancement mode power mosfet produced using stmicroelectronics? stripfet? iii technology, which is specifically designed to minimize on- resistance and gate charge to provide superior switching performance. figure 1. internal schematic diagram order code v dss r ds(on) max i d STL35N6F3 60 v < 0.022 10 a powerflat? 5x6 1 2 3 4 !-6 "ottom6iew $ $ $ $ 3 3 3 ' 4op6iew table 1. device summary order code marking package packaging STL35N6F3 35n6f3 powerflat? 5x6 tape and reel www.st.com
contents STL35N6F3 2/17 doc id 16557 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STL35N6F3 electrical ratings doc id 16557 rev 4 3/17 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 60 v v gs gate-source voltage 20 v i d (1) 1. the value is rated according to r thj-c drain current (continuous) at t c = 25 c 35 a i d (1) drain current (continuous) at t c = 100 c 25 a i d (2) 2. the value is rated according to r thj-pcb drain current (continuous) at t pcb = 25 c 10 a i d (2) drain current (continuous) at t pcb =100 c 7 a i dm (3) 3. pulse width limited by safe operating area drain current (pulsed) 100 a p tot (1) total dissipation at t c = 25 c 80 w p tot (2) total dissipation at t pcb = 25 c 5 w t stg storage temperature -55 to 175 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thj-pcb (1) 1. when mounted on fr-4 board of 1 inch2, 2 oz cu, t < 10 sec thermal resistance junction-pcb max 31.3 c/w r thj-case thermal resistance junction-case max. 1.9 c/w table 4. avalanche characteristics symbol parameter max value unit i av not-repetitive avalanche current 5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i av , v dd = 50 v) 409 mj
electrical characteristics STL35N6F3 4/17 doc id 16557 rev 4 2 electrical characteristics (t j = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = 60 v, v ds = 60 v, t c = 125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 10 a 0.019 0.022 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25 v, f = 1 mhz, v gs = 0 - 762 173 16 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 30 v, i d = 10 a v gs =10 v (see figure 13 ) - 13.6 5.0 3.7 - nc nc nc r g gate input resistance f=1 mhz open drain - 3.2 -
STL35N6F3 electrical characteristics doc id 16557 rev 4 5/17 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 30 v, i d = 5 a, r g =4.7 , v gs =10 v (see figure 12 ) - 9.7 2.9 19 4 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max unit i sd source-drain current - 10 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 40 a v sd (2) 2. pulsed: pulse duration= 300s, duty cycle 1.5% forward on voltage i sd = 10 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 10 a, di/dt = 100 a/s, v dd = 48 v, t j = 150 c (see figure 14 ) - 33 51.2 3.1 ns nc a
electrical characteristics STL35N6F3 6/17 doc id 16557 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized v ds vs temperature figure 7. static drain-source on-resistance i d 100 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 1 s 100m s 10m s tj=175c tc=25c s ingle p u l s e 0.01 am11270v1 10 -4 10 - 3 10 -2 10 -1 t p ( s ) 10 -4 10 -2 k 0.2 0.05 0.02 0.01 0.1 zth-pc b =k* rthj-pc b s ingle p u l s e =0.5 10 0 10 1 10 2 10 - 3 10 -1 rthj-pc b = 3 1. 3 c/w powerfl a t_ s i_c_ s ize i d 60 40 20 0 0 4 v d s (v) 8 (a) 2 6 8 0 5v 6v 7v v g s =10v am11271v1 i d 60 40 20 0 0 4 v g s (v) 8 (a) 2 6 8 0 v g s =5v am11272v1 bv d ss -75 t j (c) (norm) -25 75 25 125 0.90 0.94 0.9 8 1.02 1.06 1.10 i d =1ma am1127 3 v1 r d s (on) 1 8 . 8 1 8 .7 1 8 .6 1 8 .5 0 8 i d (a) (m ) 4 12 1 8 .9 19.0 19.1 19.2 v g s =10v 16 20 am11274v1
STL35N6F3 electrical characteristics doc id 16557 rev 4 7/17 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature v g s 6 4 2 0 0 2 q g (nc) (v) 8 8 4 6 10 v d s = 3 0v i d =10a 10 12 12 14 16 am11275v1 c 1200 8 00 400 0 0 20 v d s (v) (pf) 10 1600 3 0 ci ss co ss cr ss 40 50 v g s =0 f=1mhz am11276v1 v g s (th) 0.90 0.70 -75 t j (c) (norm) -25 1.10 75 25 125 i d =250 a 0.50 am11277v1 r d s (on) 1. 8 1.4 1.0 0.2 -75 t j (c) (norm) -25 75 25 125 i d =10a v g s =10v 0.6 2.2 am1127 8 v1
test circuits STL35N6F3 8/17 doc id 16557 rev 4 3 test circuits figure 12. switching times test circuit for resistive load figure 13. gate charge test circuit figure 14. test circuit for inductive load switching and diode recovery times figure 15. unclamped inductive load test circuit figure 16. unclamped inductive waveform figure 17. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STL35N6F3 package mechanical data doc id 16557 rev 4 9/17 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. powerflat? 5x6 type c-b mechanical data dim. mm min. typ. max. a0.800.830.93 a1 0 0.02 0.05 a3 0.20 b0.350.400.47 d5.00 d1 4.75 d2 4.15 4.20 4.25 e6.00 e1 5.75 e2 3.43 3.48 3.53 e4 2.58 2.63 2.68 e1.27 l0.700.800.90
package mechanical data STL35N6F3 10/17 doc id 16557 rev 4 figure 18. powerflat? 5x6 type c-b drawing s eating plane 0.0 8 c a a1 0.1 c a 3 c 72 8 646 3 _rev_h e/2 e 1 pin 1 identification expo s ed pad b 8 x d2/2 d2 e4 e2 bottom view top view pin 1 identification 1 d1 d e1 e e/2 d/2
STL35N6F3 package mechanical data doc id 16557 rev 4 11/17 table 10. powerflat? 5x6 type s-c mechanical data dim. mm min. typ. max. a0.80 1.00 a1 0.02 0.05 a2 0.25 b0.30 0.50 d5.20 e6.15 d2 4.11 4.31 e2 3.50 3.70 e1.27 e1 0.65 l 0.715 1.015 k1.05 1.35
package mechanical data STL35N6F3 12/17 doc id 16557 rev 4 figure 19. powerflat? 5x6 type s-c mechanical data "ottomview 3ideview 4opview ?$?type#
STL35N6F3 package mechanical data doc id 16557 rev 4 13/17 figure 20. powerflat? 5x6 recommended footprint (dimensions in mm) footprint 5. 3 5 4.41 1.27 0.62 0.9 8 0.95 6.26 4. 33 3 . 8 6
packaging mechanical data STL35N6F3 14/17 doc id 16557 rev 4 5 packaging mechanical data figure 21. powerflat? 5x6 tape figure 22. powerflat? 5x6 package orientation in carrier tape. me asu red from centerline of s procket hole to centerline of pocket. c u m u l a tive toler a nce of 10 s procket hole s i s 0.20 . me asu red from centerline of s procket hole to centerline of pocket. (i) (ii) (iii) all dimen s ion s a re in millimeter s 2 2.00.1 (i) bo (5. 3 00.1) ko (1.200.1) 0.05) ?1.5 min. ?1.550.05 p ao(6. 3 00.1) f(5.500.1)(iii) w(12.000. 3 ) 1.750.1 4.00.1 (ii) p 0 y y s ection y-y c l p1( 8 .000.1) do d1 e 1 (0. 3 0 t ref.r0.50 ref 0.20 b as e a nd bu lk qua ntity 3 000 pc s 8 2 3 4 3 50_t a pe_rev_c
STL35N6F3 packaging mechanical data doc id 16557 rev 4 15/17 figure 23. powerflat? 5x6 reel 2.20 ?21.2 1 3 .00 core detail 2.50 1.90 r0.60 77 12 8 ?a r1.10 2.50 4.00 r25.00 part no. w1 w2 1 8 .4 (m a x) w 3 06 p s e s d logo at t e n t i o n ob s erve precaution s for handling electro s tat i c s en s itive device s 11.9/15.4 12.4 (+2/-0) a 33 0 (+0/-4.0) all dimen s ion s a re in millimeter s ?n 17 8 (2.0) 8 2 3 4 3 50_reel_rev_c
revision history STL35N6F3 16/17 doc id 16557 rev 4 6 revision history table 11. document revision history date revision changes 29-oct-2009 1 first release. 15-nov-2011 2 section 4: package mechanical data has been updated. minor text changes. document status promoted from preliminary data to datasheet. 27-mar-2012 3 section 2.1: electrical characteristics (curves) has been inserted. 11-may-2012 4 figure 2: safe operating area and figure 3: thermal impedance have been changed.
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